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rf & protection devices data sheet revision 3.2, 2014-07-15 BGT24MTR12 silicon germanium 24 ghz transceiver mmic
edition 2014-07-15 published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGT24MTR12 silicon germanium 24 ghz transceiver mmic data sheet 3 revision 3.2, 2014-07-15 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobridge?, econ odual?, econopim?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, or iga?, primarion?, prim epack?, primestack?, pro-sil?, profet?, rasic?, reversave?, satric?, sieget?, sindrion?, sipmos?, smartlewis?, solid flash?, tempfe t?, thinq!?, trench stop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-02-24 BGT24MTR12 silicon germanium 24 ghz transceiver mmic revision history: 2014-07-15, revision 3.2 previous revision: 2014-03-25, revision 3.1 page subjects (major cha nges since last revision) 24 update recommended footprint drawing (change of ground plains)
BGT24MTR12 silicon germanium 24 ghz transceiver mmic table of contents data sheet 4 revision 3.2, 2014-07-15 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.4 measured rf characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.1 power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.2 tx section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.3 rx section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.5 temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.6 power detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.4 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.5 equivalent circuit diagram of mmic interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.2 reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.3 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents
BGT24MTR12 silicon germanium 24 ghz transceiver mmic list of figures data sheet 5 revision 3.2, 2014-07-15 figure 1 BGT24MTR12 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 3 timing diagram of the spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 4 cross-section view of application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5 detail of compensation structure (valid for appl . board mat. ro4350b, 0.254mm acc. to fig. 5) 21 figure 6 application board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 7 equivalent circuit diagram of mmic interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 8 recommended footprint and stenc il layout for the vqfn32-9 package . . . . . . . . . . . . . . . . . . . 24 figure 9 reflow profile for BGT24MTR12 (vqfn3 2-9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 10 package outline (top, side and bott om view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 11 marking layout vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 12 tape of vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 list of figures
BGT24MTR12 silicon germanium 24 ghz transceiver mmic list of tables data sheet 6 revision 3.2, 2014-07-15 table 1 absolute maximum ra tings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 4 typical characteristics t a = -40 .. 105 c, spi-bit 4 = low . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5 typical characteristics t a = -40 .. 105 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = low . . . . . . . . . . . . 11 table 6 typical characteristics t a = -40 .. 105 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = low . . . . . . . . . . . . 13 table 7 typical characteristics temperature sensor t a = -40 .. 105 c . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 8 typical characteristics power detector t a = -40 .. 105 c, v cc = 3.3 v . . . . . . . . . . . . . . . . . . . 14 table 9 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 10 pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 11 spi block data bit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 12 spi timing and logic levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 13 truth table amux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 list of tables
product name package chip marking BGT24MTR12 vqfn32-9 t0825 BGT24MTR12 silicon germanium 24 ghz transceiver mmic BGT24MTR12 data sheet 7 revision 3.2, 2014-07-15 1 features ? 24 ghz transceiver mmic with one transmitter and two receiver units ? fully integrated low phase noise vco ? switchable prescaler with 1.5 ghz and 23 khz output ? on chip power and temperature sensors ? gilbert based homodyne quadrature receiver ? single ended rf input terminals ? low noise figure nf ssb : 12 db ? high conversion gain: 26 db ? high 1 db input compression point: -12 dbm ? single supply voltage 3.3 v ? power consumption 690 mw in continuous operating mode ? 200 ghz bipolar sige:c technology b7hf200 ? fully esd protected device ? vqfn-32-9 leadless plastic package incl. lti feature ? pb-free (rohs compliant) package description the BGT24MTR12 is a silicon germanium mmic for signal ge neration and reception, o perating from 24.0 to 24.25 ghz. it is based on a 24 ghz fundam ental voltage controlled oscillator. a s witchable frequency prescaler is included with output frequencies of 1.5 ghz and 23 khz. the main rf output delivers typ. 11 dbm signal power to feed an antenna. a rc polyphase filter (ppf) is us ed for lo quadrature phase generation of the homodyne quadrature downconversion mixer. output power sensors as well as a temperature sensor are implemented for monitoring purposes. the device is cont rolled via spi and is manufactured in a 0.18m sige:c technology offering a cutoff frequency of 200 ghz. the mmic is packaged in a 32 pin leadless rohs compliant vqfn package.
BGT24MTR12 silicon germanium 24 ghz transceiver mmic features data sheet 8 revision 3.2, 2014-07-15 figure 1 BGT24MTR12 block diagram BGT24MTR12_chip_bid.vsd spi buffer /16 tx pa /65536 3 tx power sensor temp. sensor ppf* lna ifi1 ifq1 90 0 rfin1 lo buffer mpa ifqx1 ifix1 * poly phase filter fine coarse q2 si cs clk lo power sensor amux 2 2 ana ppf* lna ifi2 ifq2 90 0 rfin2 lo buffer ifqx2 ifix2 q1 txx
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 9 revision 3.2, 2014-07-15 2 electrical characteristics 2.1 absolute maximum ratings t a = -40 c to 105 c; all voltages with respect to grou nd, positive current flowing into pin (unless otherwise specified) 1) 1) not subject to production test, specified by design table 1 absolute maximum ratings parameter symbol values unit note / test condition min. typ. max. supply voltage v cc -0.3 ? 3.6 v ? dc voltage at rf pins tx, txx, rfin1, rfin2 vdc rf 0 ? 0 v mmic provides short circuit to gnd for all rf pins dc voltage at pins ifi1/2, ifix1/2, ifq1/2, ifqx1/2 vdc if 0?vccv? dc current into pins ifi1/2, ifix1/2, ifq1/2, ifqx1/2 i if -8.5 ? 3.5 ma max. values indicate current due to short circuit to gnd and vcc respectively dc voltage at pin ana vdc ana -0.3 ? 3.6 v ? dc current into pin ana (sink) i ana sink 125 350 500 a max. values indicate current due to short circuit to gnd and vcc respectively dc current into pin ana (source) i ana source -7??ma? dc voltage at pin q1 vdc q1 vcc-0.3 ? vcc v ? dc current into pin q1 i q1 -8 ? 12 ma ? dc voltage at pin q2 vdc q2 -0.3 ? 3.6 v ? dc current into pin q2 enabled i q2en -3?3ma? dc current into pin q2 disabled i q2dis -10 ? 10 a ? dc voltage at spi input pins si, clk, cs vdc spiin -0.3 ? 3.6 v ? dc current into spi input pins si, clk, cs i spiin ??3ma? rf input power into pins rfin1, rfin2 p rf ??0dbm? dc voltage at pins fine, coarse v f , v c 0?5v? dc current into pins fine, coarse i f , i c -1 ? 0.11 ma positive currents if v tune > v cc
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 10 revision 3.2, 2014-07-15 attention: stresses exceeding the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 thermal resistance 2.3 esd integrity total power dissipation p diss ? ? 1050 mw with bist deactivated junction temperature t j -40 ? 150 c ? ambient temperature range t a -40 ? 105 c t a = temperature at package soldering point storage temperature range t stg -40 ? 150 c ? table 2 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for calculation of r thjs please refer to application note thermal resistance r thjs ??40k/w? table 3 esd integrity parameter symbol values unit note / test condition min. typ. max. esd robustness, hbm 1) 1) according to ansi/esda/jedec js-001 (r = 1.5k , c = 100pf) for electrostatic discharge sensitivity testing, human body model (hbm)-component level v esd-hbm -1 ? 1 kv all pins esd robustness, cdm 2) 2) according to jedec jesd22-c101 field-induced charged device model (cdm), test method for electrostatic-discharge- withstand thresholds of microelectronic components v esd-cdm -500 ? 500 v all pins table 1 absolute maximum ratings (cont?d) parameter symbol values unit note / test condition min. typ. max.
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 11 revision 3.2, 2014-07-15 2.4 measured rf characteristics 2.4.1 power supply 2.4.2 tx section table 4 typical characteristics t a = -40 .. 105 c, spi-bit 4 = low parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 3.135 3.3 3.465 v ? supply current i cc 150 210 270 ma max. tx output power, all prescal- ers are activated, lo and tx output buffer in high mode table 5 typical characteristics t a = -40 .. 105 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = low 1) parameter symbol values unit note / test condition min. typ. max. vco frequency range f vco 24.0 ? 24.25 ghz ? vco fine tuning voltage 2) v f 0.5 3) ?3.1v? vco coarse tuning voltage 2) v c 0.5 3) ?3.1v ? vco tuning slope fine f/ v f ? ? 1500 mhz/v ? vco tuning slope coarse f/ v c ? ? 3000 mhz/v ? vco temperature drift f/ t -10 -6 0 mhz/k min @ t = -40c vco pushing f/ v cc -350 60 350 mhz/v absolute values vco phase noise p n ? -85 -75 dbc/hz @ 100khz offset, v f = v c tx/txx load impedance z tx z txx ? 20.8-j20.2 19.5-j11.7 ? typical value at 24.125ghz and vswr 2:1 max. tx output power p tx 61115dbm? tx ouput power adjustable range a tx 3 9 ? db adjustable via spi tx ouput power in ?off? mode 4) p txoff ? ? -30 dbm parameter based on ifx eval board design q1 prescaler division ratio d q1 ?2 4 ??? q1 prescaler output power p q1 -14 -9 -4 dbm q1 loaded with 50 ohm (ac- coupled) q1 output impedance 4) z q1 ?50? ?
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 12 revision 3.2, 2014-07-15 q2 prescaler division ratio d q2 ?2 20 ??? q2 prescaler max. output voltage v maxq2 2.4 ? ? v test condition: q2 loaded with high impedance probe (1 mohm,13 pf) q2 prescaler min. output voltage v minq2 ? ? 0.8 v test condition: q2 loaded with high impedance probe (1 mohm, 13 pf) q2 prescaler max. output source current i maxsource q2 1.2 ? ? ma test condition: q2 loaded with 50 ohm to vcc q2 prescaler max. output sink current i maxsink q2 1.2 ? ? ma test condition: q2 loaded with 50 ohm to vcc q2 prescaler output resistance in disable mode r q2,dis 100 ? ? k ? 1) performance based on application circuit figure 2 on pa ge 15, cross section of app lication board, compensation structures and application board layout figur e 4 on page 21ff and footprint figure 8 on page 24 2) at tuning pins chipinternal pull-up of 60k 20% to vcc; max.- and min. temperature tuning voltage limits are chosen in a way that they can be linearly interp olated within operatin g temperature range 3) min. limit @ 25c = 0.8v ; min. limit @ 105c = 1.15v 4) guaranteed by device design table 5 typical characteristics t a = -40 .. 105 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = low 1) (cont?d) parameter symbol values unit note / test condition min. typ. max.
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 13 revision 3.2, 2014-07-15 2.4.3 rx section table 6 typical characteristics t a = -40 .. 105 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = low 1) 1) performance based on application circuit figure 2 on pa ge 15, cross section of app lication board, compensation structures and application board layout figur e 4 on page 21ff and footprint figure 8 on page 24 parameter symbol values unit note / test condition min. typ. max. rfin frequency range f rfin 24.0 ? 24.25 ghz ? rfin port impedance 2) 2) guaranteed by device design z rfin1 z rfin2 ? 15.9-j18.4 15.7-j18.9 ? typical value at 24.125ghz and vswr 2:1 rfin vswr vswr ? ? 2:1 ? at source port of off chip compensation network as pro- posed if frequency range f if 0?10mhz? if output impedance z if 850 1000 1150 ? leakage lo to rfin l lo=>rfin ? ? -30 dbm lo signal power @ rfin port, parame- ter based on ifx eval board design isolation rfin1 to rfin2 i rfin1-rfin2 30 ? ? db parameter based on ifx eval board design voltage conversion gain 3) 3) lowest gain at high temperatur e, highest gain at low temperature g c 19 26 31 db r load,if >10 k lna gain reduction g clg 358db? ssb noise figure n ssb ? 12 20 db single sideband at f if = 100 khz if 1/f corner frequency f c ?1020khz? input compression point ip 1db -17 -12 ? dbm ? input 3rd order intercept point iip3 -8 -4 ? dbm ? quadrat. phase imbalance p -10 ? 10 deg ? quadrat. amplitude imbalance a -1 ? 1 db ?
BGT24MTR12 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 14 revision 3.2, 2014-07-15 2.5 temperature sensor monitoring of the chip temperature is provided by t he on-chip temperature sensor which delivers temperature- proportional voltage. 2.6 power detector for rf power indication, peak voltage detectors are connec ted to the output of the tx power amplifier and to the lo medium power amplifier. to eliminate temperature and supply voltage variatio ns, a reference output v ref is available through the ana output for the tx and lo po wer sensor. the compensated detector output voltage is given by the difference between v out and v ref for both power sensors respectively. this voltage is proportional to the rf voltage swing at the individual amplif ier outputs, its characteristic is non-directional. table 7 typical characteristics temperature sensor t a = -40 .. 105 c 1) 1) all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. temperature range t tsens -40 ? 105 c ? output temperature voltage v out,temp ? 1.50 ? v @ 25c sensitivity s tsens ?4.5?mv/k? overall accuracy error e rr tsens ?? 15 k ? table 8 typical characteristics power detector t a =-40 .. 105c, v cc =3.3v 1) 1) all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. power range p psens -10 ? 15 dbm ? tx power sensor v out,tx - v ref,tx ?550?mv@ p tx = 11 dbm lo power sensor v out,lo - v ref,lo ? 50 ? mv @ typ. internal p lo
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 15 revision 3.2, 2014-07-15 3 application circuit and block diagram 3.1 application ci rcuit schematic figure 2 application circuit with chip outline (top view) BGT24MTR12_appl_bid.vsd q1 vee txx tx vee si clk cs q2 vee vee fine coarse vcc 3) rfin2 vee ifix2 ifi2 ifq2 ifqx2 vee 12 34 5 6 10 89 7 15 12 13 14 17 18 16 11 19 20 29 26 28 27 25 24 23 22 21 30 31 32 r1 1) 100 c1 1) 1f r2 1) 100 c2 1) 1f 1) rc-time constants to be defined according to modulation requirements. c3 1f c4 4) 470f test pin 2) 2) connect pin 16 to pin 17 ana test pin 2) vcc 3) vee rfin1 vee ifix1 ifi1 ifq1 ifqx1 3) galvanic connection of vcc pins on silicon 4) optional value: according to quality of supply voltage
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 16 revision 3.2, 2014-07-15 table 9 bill of materials part number part type manufacturer size comment c1 ... c4 chip capacitor various various ? r1 ... r2 chip resistor various 0402 ?
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 17 revision 3.2, 2014-07-15 3.2 pin description table 10 pin definition and function pin no. name function 1 vcc supply voltage 2 vee ground 3 rfin1 rf input downconverter 1 4 vee ground 5 fine vco fine tuning input 6 coarse vco coarse tuning input 7 vee ground 8 rfin2 rf input downconverter 2 9 vee ground 10 vcc supply voltage 11 vee ground 12 ifqx2 complementary quadrature phase if output downconverter 2 13 ifq2 quadrature phase if output downconverter 2 14 ifi2 in phase if output downconverter 2 15 ifix2 complementary in phase if output downconverter 2 16 test pin test pin; dc coupled pin 17 test pin test pin; dc coupled pin 18 cs chip select inpu t spi (inverted) 19 clk clock input spi block 20 si data input spi block 21 vee ground 22 tx transmit output 23 txx complementary transmit output 24 vee ground 25 ana analog output 26 q1 prescaler output 1.5ghz 27 q2 prescaler output 23khz 28 ifix1 complementary in phase if output downconverter 1 29 ifi1 in phase if output downconverter 1 30 ifq1 quadrature phase if output downconverter 1 31 ifqx1 complementary quadrature phase if output downconverter 1 32 vee ground
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 18 revision 3.2, 2014-07-15 3.3 spi 1.) three signals control the serial per ipheral interface of the BGT24MTR12: si (data); clk (clock); cs (chip select) 2.) the data bits si (msb first) are read in the shift register with falling edge of the clk signal. please make sure, that the data is present at least 10 ns before and at least 10 ns after the falling edge of the clock signal. 3.) the clk and cs signals are combined internally. at least 20 ns before first rising edge of the first clk signal cs needs to be in "low" state. while the data is read, cs has to remain in "low" state. 4.) when data read in is fi nished, the shift register content will be written in the latch at the ri sing edge of the cs signal. the time between the last falling edge of the clk signal and t he rising edge of the cs must be at least 20 ns. table 11 spi block da ta bit description data bit name description (logic high) power on state 15 gs lna gain reduction low 14 ? not used low 13 amux2 analog multiplexer control bit 2 high 12 dis_pa disable power amplifier high 11 test bit test bit, must be low otherwise malfunction low 10 test bit test bit, must be low otherwise malfunction low 9 test bit test bit, must be low otherwise malfunction low 8 amux1 analog multiplexer control bit 1 low 7 amux0 analog multiplexer control bit 0 low 6 dis_div64k disable 64k divider low 5 dis_div16 disable 16 divider low 4 pc2_buf high lo buffer output power, need to be low otherwise increased current consumption low 3 pc1_buf high tx buffer output power low 2 pc2_pa tx power reduction bit 2 high 1 pc1_pa tx power reduction bit 1 high 0 pc0_pa tx power reduction bit 0 high
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 19 revision 3.2, 2014-07-15 figure 3 timing diagram of the spi table 12 spi timing and logic levels parameter symbol values unit min. typ. max. serial clock frequency f sclk 0?50mhz serial clock high time f sclk(h) 10 ? ? ns serial clock low time t sclk(l) 10 ? ? ns chip select lead time t cs(lead) 20 ? ? ns chip select lag time t cs(lag) 20 ? ? ns data setup time t si(su) 10 ? ? ns data hold time t si(h) 10 ? ? ns low level (si, clk, cs ) v in(l) 0?0.8v high level (si, clk, cs ) v in(h) 2.0 ? v cc v input capacitance (si, clk, cs ) c in ??2pf input current (si, clk, cs ) i in -150 ? 150 a table 13 truth table amux output signal ana amux2 amux1 amux0 v out,tx low low low v ref,tx low low high v out,lo low high low v ref,lo low high high v temp high low low test_signal1 high low high BGT24MTR12_spi.vsd
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 20 revision 3.2, 2014-07-15 test_signal2 high high low test_signal2 high high high table 13 truth table amux (cont?d) output signal ana amux2 amux1 amux0
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 21 revision 3.2, 2014-07-15 3.4 application board figure 4 cross-section view of application board figure 5 detail of compensation structure (valid for appl. board mat. ro4350b, 0.254mm acc. to fig. 5) copper 35um blind-vias vias ro4350b, 0.254mm fr4, 0.5mm BGT24MTR12_cross_section_view.vsd fr4, 0.25mm BGT24MTR12_vqfn32-9-cs.vsd single-ended rfin 0.30 0.55 1.60 1.15 differential tx 0.50 0.30 1.10 0.50 1.65 0.55 all specified values in [mm]
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 22 revision 3.2, 2014-07-15 figure 6 application board layout note: in order to achieve the same performance as give n in this datasheet please follow the suggested pcb- layout. the compensation structure is critical for rf performance. via holes as recommended on one of next pages (not shown above). top layer (top view) BGT24MTR12_app_board_layout.vsd mid1 and bottom layer (top view) mid2 layer (top view)
BGT24MTR12 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 23 revision 3.2, 2014-07-15 3.5 equivalent circuit diag ram of mmic interfaces figure 7 equivalent circuit diagram of mmic interfaces BGT24MTR12_esb.vsd pin 3 , 8 , 22 , 23 q2 vee vcc pin 5 , 6 120 120 fine, coarse vee vcc pin 12 , 13 , 14 , 15 , 28 , 29 , 30 , 31 60k 300 rfin1, rfin2, tx, txx vee ifx vee vcc 400 cs, clk, si vee vcc pin 18 , 19 , 20 54k ana vee vcc pin 25 1500 40 pin 26 100 q1 vee vcc pin 27 50 tolerance of all resistors +/- 20%
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 24 revision 3.2, 2014-07-15 4 physical characteristics 4.1 package footprint figure 8 recommended footprint and stencil layout for the vqfn32-9 package BGT24MTR12_vqfn32-9-fp.vsd 0.3 0.85 0.3 2.9 3.3 3.9 4.3 1.0 2.2 3.2 0.1 0.2 copper solder mask vias pastefree area 0.7 0.1 pin 1 0.5 0.1 0.1 0.15 0.15 0.15 0.2 all specified values in [mm]
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 25 revision 3.2, 2014-07-15 4.2 reflow profile soldering process qualified during qualification with ?pre conditioning msl-3: 30c. 60%r.h., 192h, according to jedec jstd20?. figure 9 reflow profile for BGT24MTR12 (vqfn32-9) BGT24MTR12_reflow_profile.vsd reflow profile recommended by infineon technologies ag (based on ipc/jedec j-std-020c)
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 26 revision 3.2, 2014-07-15 4.3 package dimensions figure 10 package outline (top, side and bottom view) figure 11 marking layout vqfn32-9 BGT24MTR12_vqfn32-9-po.vsd all specified values in [mm] BGT24MTR12_vqfn32-9_ml.vsd
BGT24MTR12 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 27 revision 3.2, 2014-07-15 figure 12 tape of vqfn32-9 BGT24MTR12_vqfn32-9_ct.vsd all specified values in [mm]
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